The inventor of the IGBT provides essential design and applications information to enable engineers and designers to build the IGBTs into consumer, industrial, transportation, lighting, medical, and renewable energy products
About the AuthorForewordPrefaceChapter 1. IntroductionChapter 2. IGBT Structure and OperationChapter 3. IGBT Structural DesignChapter 4. Safe Operating Area DesignChapter 5. Chip Design, Protection, and FabricationChapter 6. Package and Module DesignChapter 7. Gate Drive Circuit DesignChapter 8. IGBT ModelsChapter 9. IGBT Applications: TransportationChapter 10. IGBT Applications: IndustrialChapter 11. IGBT Applications: LightingChapter 12. IGBT Applications: ConsumerChapter 13. IGBT Applications: MedicalChapter 14. IGBT Applications: DefenseChapter 15. IGBT Applications: Renewable EnergyChapter 16. IGBT Applications: Power TransmissionChapter 17. IGBT Applications: FinancialChapter 18. IGBT Applications: OtherChapter 19. IGBT Social ImpactChapter 20. SynopsisIndex
Professor Baliga obtained his Bachelor of Technology degree in 1969
from the Indian Institute of Technology, Madras, India. He was the
recipient of the Philips India Medal and the Special Merit Medal
(as Valedictorian) at I.I.T, Madras. He obtained his Masters and
Ph.D. degrees from Rensselaer Polytechnic Institute, Troy, NY, in
1971 and 1974, respectively. His thesis work involved Gallium
Arsenide diffusion mechanisms and pioneering work on the growth of
InAs and GaInAs layers using Organometallic CVD techniques. At
R.P.I., he was the recipient of the IBM Fellowship in 1972 and the
Allen B. Dumont Prize in 1974.
From 1974 to 1988, Dr. Baliga performed research and directed a
group of 40 scientists at the General Electric Research and
Development Center in Schenectady, NY, in the area of Power
Semiconductor Devices and High Voltage Integrated Circuits. During
this time, he pioneered the concept of combining MOS and Bipolar
physics to create a new family of discrete devices. He is the
inventor of the IGBT which is now in production by many
International Semiconductor companies. For his work, Scientific
American Magazine named him one of the ‘Eight heroes of the
semiconductor revolution’ in their 1997 special issue commemorating
the Solid-State Century. Dr. Baliga is also the originator of the
concept of merging Schottky and p-n junction physics to create a
new family of JBS power rectifiers that are commercially available
from various companies.
In August 1988, Dr. Baliga joined the faculty of the Department of
Electrical and Computer Engineering at North Carolina State
University, Raleigh, North Carolina, as a Full Professor. At NCSU,
in 1991 he established an international center called the Power
Semiconductor Research Center (PSRC) for research in the area of
power semiconductor devices and high voltage integrated circuits,
and has served as its Founding Director. In 1997, in recognition of
his contributions to NCSU, he was given the highest university
faculty rank of Distinguished University Professor of Electrical
Engineering. In 2008, Professor Baliga was a key member of an NCSU
team - partnered with four other universities - that was successful
in being granted an Engineering Research Center from the National
Science Foundation for the development of micro-grids that allow
integration of renewable energy sources.
In 2010, Dr. Baliga was inducted into the Engineering Design
Magazine’s “Engineering Hall of Fame for his invention,
development, and commercialization of the Insulated Gate Bipolar
Transistor (IGBT), joining well known luminaries (e.g. Edison,
Tesla, and Marconi) in the electrical engineering field. The award
announcement states: “While working at General Electric in the late
1970s, Baliga conceived the idea of a functional integration of MOS
technology and bipolar physics that directly led to the IGBT’s
development… it remains undeniable that Baliga’s vision and
leadership played a critical role in moving the IGBT from a
paper-based concept to a viable product with many practical
applications.
Professor Baliga has received numerous awards in recognition for
his contributions to semiconductor devices. These include two IR
100 awards (1983, 1984), the Dushman and Coolidge Awards at GE
(1983), and being selected among the 100 Brightest Young Scientists
in America by Science Digest Magazine (1984), and, on October 21,
2011, President Obama personally presented Dr. B. Jayant Baliga
with the National Medal of Technology and Innovation, the highest
form of recognition given by the United States Government to an
Engineer, in a ceremony at the White House. Dr. Baliga’s award
citation reads: For development and commercialization of the
Insulated Gate Bipolar Transistor and other power semiconductor
devices that are extensively used in transportation, lighting,
medicine, defense, and renewable energy generation systems.
"Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely used around the globe for a broad range of applications." --Power Electronics
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